Graphene is a material used for a number of materialistic rationales in the industrial sector for the medical, defense or even electronic purposes. In the general sense, the graphene that is commonly present in a regular form has no essential role to help provide an option for silicon chips used in nanoelectronics.
The graphene is recognized for its energy band configuration that does not let any energy gap or magnetic effects be present in the material. At the moment, the researchers have developed graphene antidot lattices, which are a new type of graphene device that consists of a sporadic array of holes wherein there a number of atoms missing in the otherwise standard single film of carbon atoms. The missing atoms in the energy band gap cause it to open up just about the baseline energy level of the material and potentially turn the graphene into a semiconductor. The Iranian physicists are lately studying the impacts of antidot dimension on the magnetic properties and electronic pattern of triangular antidots in graphene. According to Payame Noor University Researcher Zahra Talebi Esfahani and her colleagues, there is a bandgap opening present in the antidot graphene lattices that are highly dependent on the spin degree of freedom of electrons and these, in addition, can be scrutinized for a number of purposes such as spin transistors. The holes similar to that of equilateral and right triangles can help simulate to investigate the graphene holes’ armchair-shaped and zigzag-shaped edges effect on the material’s properties.
In the current research, it has been found that the size, shape and antidots spacing has a major effect on the energy band gap and the total magnetization properties. The energy band gap has helped create intervallic arrays of triangular antidot lattices which in turn help develop magnetic semiconductors. As the electron spins in the matters help create energy band gap, the magnetic antidot lattices are the ultimate nominee for spintronic utilizations. The New York University Tandon School of Engineering and NYU Center for Neural Science researchers have invented a technique of building ultra-small, ultra-sensitive electrochemical sensors with equivalent and humdrum properties by engineering graphene structure on an atomic level.